Karen Kim
Address
Stanford University
Building/Rm: 530 - 205
Stanford, CA 94305
- E-Mail
References
3 document(s) found.
J. Provine, Peter Schindler, Yongmin Kim, Steve P. Walch, Hyo Jin Kim, Ki-Hyun Kim, and Fritz B. Prinz, "Correlation of film density and wet etch rate in hydrofluoric acid of plasma enhanced atomic layer deposited silicon nitride", AIP Advances, vol. 6, pp. 65012-65012, 2016. Yongmin Kim, J. Provine, Stephen P. Walch, Joonsuk Park, Witchukorn Phuthong, Anup L. Dadlani, Hyo-Jin Kim, Peter Schindler, Kihyun Kim, and Fritz B. Prinz, "Plasma-Enhanced Atomic Layer Deposition of SiN–AlN Composites for Ultra Low Wet Etch Rates in Hydrofluoric Acid", ACS Appl. Mater. Interfaces, vol. 8 (27), pp. 17599-17605, 2016. [1]
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