People
Ioannis Petousis

Ioannis Petousis

Affiliation

Department of Electrical Engineering, Stanford University
Department of Material Science & Engineering, Stanford University
Lawrence Berkeley National Laboratory

Address

Stanford University
Building/Rm: 530 - 205
Stanford, CA 94305

E-Mail
Work Phone
admin

Additional Information

Education

  • M.S. in Electrical Engineering, Stanford University
  • M.Eng in Mechanical Engineering, Imperial College, London
  • C.Eng Chartered Engineer with the Engineering Council in the UK

    • Academic Interests

  • Quantum-mechanical modelling of materials for electronic properties
  • Machine Learning
  • Materials Discovery

    • Personal Interests

    Music, Running, Swimming

    References

    5 document(s) found.
    [1]

    Ioannis Petousis, Wei Chen, Geoffroy Hautier, Tanja Graf, Thomas D. Schladt, Kristin A. Persson, and Fritz B. Prinz, "Benchmarking density functional perturbation theory to enable high-throughput screening of materials for dielectric constant and refractive index", Phys. Rev. B, vol. 93, p. 115151, 2016.
    Jan Torgersen, Shinjita Acharya, Anup Lal Dadlani, Ioannis Petousis, Yongmin Kim, Orlando Trejo, Dennis Nordlund, Fritz Prinz, "Relating Electronic and Geometric Structure of Atomic Layer Deposited BaTiO3 to its Electrical Properties.", Journal of Physical Chemistry Letters, vol. 7, pp. 1428-1433, 2016.
    A. Dadlani, O.Trejo, S. Acharya, J. Torgersen, I. Petousis, D. Nordlund, R. Sarangi, P. Schindler, F. Prinz, "Exploring local electronic structure and geometric arrangement of ALD Zn(O,S) buffer layers using X-Ray Absorption spectroscopy", Journal of Materials Chemistry C, vol. 3, pp. 12192-12198, 2015.
    Petousis, I., Homburg, E., Derks, R., Dietzel, A, "Transient behaviour of magnetic micro-bead chains rotating in a fluid by external fields", Lab Chip, vol. 7, pp. 1746-1751, 2007.
    Caro, C.G., Petousis, I., Falzon, B.G., "Stent", Patent, GB2418362, WO2006032902, US 8,236,043 B2, 2004.
    [1]


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